- 您现在的位置：买卖IC网 > Datasheet目录484 > NP32N055SHE-E1-AY (Renesas Electronics America)MOSFET N-CH 55V 32A TO-252 Datasheet资料下载
参数资料
| 型号： | NP32N055SHE-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 32A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1600pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-Channel MOS Field Effect
Transistors designed for high current switching applications.
PART NUMBER
NP32N055HHE
PACKAGE
TO-251 (JEITA) / MP-3
FEATURES
NP32N055IHE
Note
TO-252 (JEITA) / MP-3Z
? Channel temperature 175 degree rated
? Super low on-state resistance
R DS(on) = 25 m ? MAX. (V GS = 10 V, I D = 16 A)
? Low C iss : C iss = 1100 pF TYP.
? Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
NP32N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
(TO-251)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V DSS
V GSS
I D(DC)
55
±20
±32
V
V
A
Drain Current (Pulse)
Note1
I D(pulse)
±100
A
Total Power Dissipation (T A = 25°C)
P T
1.2
W
Total Power Dissipation (T C = 25°C)
P T
66
W
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Note2
Note2
I AS
E AS
T ch
T stg
26 / 21 / 7
6.7 / 44 / 49
175
–55 to + 175
A
mJ
°C
°C
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, R G = 25 ?, V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.27
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14155EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
相关PDF资料 |
PDF描述 |
|---|---|
| NP32N055SLE-E1-AY | MOSFET N-CH 55V 32A TO-252 |
| NP34N055SHE-E1-AY | MOSFET N-CH 55V 34A TO-252 |
| NP34N055SLE-E1-AY | MOSFET N-CH 55V 34A TO-252 |
| NP36N055SHE-E1-AY | MOSFET N-CH 55V 36A TO252 |
| NP36N055SLE-E1-AY | MOSFET N-CH 55V 36A TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP32N055SLE-E1-AY | 功能描述:MOSFET N-CH 55V 32A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP32N055SLE-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP32N055SLE-E1-AZ_NEC | 制造商:Renesas Electronics Corporation 功能描述: |
| NP33 | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 3-G, 3 BOX MT BLANK, BR |
| NP33-12 | 制造商:EnerSys 功能描述:Battery; Sealed Lead Acid; 12 V; 33 Ah; Receptacle Termination; Rechargeable |
发布紧急采购，3分钟左右您将得到回复。