参数资料
型号: NP32N055SHE-E1-AY
厂商: Renesas Electronics America
文件页数: 5/9页
文件大小: 0K
描述: MOSFET N-CH 55V 32A TO-252
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 32A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 16A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 32nC @ 10V
输入电容 (Ciss) @ Vds: 1600pF @ 25V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252(MP-3ZK)
包装: 带卷 (TR)
NP32N055HHE, NP32N055IHE, NP32N055SHE
TYPICAL CHARACTERISTICS (T A = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
70
60
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
80
40
60
30
40
20
20
10
0
0
25
50
75
100 125 150 175 200
0
0
25
50
75
100 125 150 175 200
T C - Case Temperature - ?C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
60
T C - Case Temperature - ?C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
ite )
) L im 0 V
(on S =
R D t V G
iss
i t e D
1m
100
10
(a P DC
1
d
S I D(DC)
L i m o w e r
d
ipa
tio
n
I D(pulse)
s
10
PW
0 μ s
=1
0 μ
s
50
40
30
49 mJ
44 mJ
I AS = 7 A
21 A
26 A
20
1
T C = 25?C
10 6.7 mJ
Single Pulse
0.1
0.1
1
10
100
0
25
50
75
100
125
150
175
V DS - Drain to Source Voltage - V
Starting T ch - Starting Channel Temperature - ?C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
R th(ch-A) = 125 ?C /W
10
R th(ch-C) = 2.27 ?C /W
1
0.1
Single Pulse
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
T C = 25 ?C
100
1000
PW - Pulse Width - s
Data Sheet D14155EJ4V0DS
3
相关PDF资料
PDF描述
NP32N055SLE-E1-AY MOSFET N-CH 55V 32A TO-252
NP34N055SHE-E1-AY MOSFET N-CH 55V 34A TO-252
NP34N055SLE-E1-AY MOSFET N-CH 55V 34A TO-252
NP36N055SHE-E1-AY MOSFET N-CH 55V 36A TO252
NP36N055SLE-E1-AY MOSFET N-CH 55V 36A TO-252
相关代理商/技术参数
参数描述
NP32N055SLE-E1-AY 功能描述:MOSFET N-CH 55V 32A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP32N055SLE-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
NP32N055SLE-E1-AZ_NEC 制造商:Renesas Electronics Corporation 功能描述:
NP33 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 3-G, 3 BOX MT BLANK, BR
NP33-12 制造商:EnerSys 功能描述:Battery; Sealed Lead Acid; 12 V; 33 Ah; Receptacle Termination; Rechargeable