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参数资料
| 型号： | NP32N055SLE-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 32A TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2000pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3ZK） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE,NP32N055ILE,NP32N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
PART NUMBER
NP32N055HLE
PACKAGE
TO-251 (JEITA) / MP-3
NP32N055ILE
Note
TO-252 (JEITA) / MP-3Z
FEATURES
? Channel temperature 175 degree rating
NP32N055SLE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
? Super low on-state resistance
R DS(on)1 = 24 m ? MAX. (V GS = 10 V, I D = 16 A)
R DS(on)2 = 29 m ? MAX. (V GS = 5.0 V, I D = 16 A)
? Low C iss : C iss = 1300 pF TYP.
? Built-in gate protection diode
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC)
V DSS
V GSS
I D(DC)
55
±20
±32
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±100
A
Total Power Dissipation (T A = 25°C)
P T
1.2
W
Total Power Dissipation (T C = 25°C)
Channel Temperature
Storage Temperature
P T
T ch
T stg
66
175
? 55 to +175
W
°C
°C
(TO-252)
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
28 / 21 / 8
7.8 / 44 / 64
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, R G = 25 ? , V GS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R th(ch-C)
2.27
°C/W
Channel to Ambient Thermal Resistance R th(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14137EJ5V0DS00 (5th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP32N055SLE-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP32N055SLE-E1-AZ_NEC | 制造商:Renesas Electronics Corporation 功能描述: |
| NP33 | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 3-G, 3 BOX MT BLANK, BR |
| NP33-12 | 制造商:EnerSys 功能描述:Battery; Sealed Lead Acid; 12 V; 33 Ah; Receptacle Termination; Rechargeable |
| NP33-12B | 制造商:EnerSys 功能描述:LEAD ACID BATTERY, 12V, 33AH; Battery Size Code:-; Battery Capacity:33Ah; Battery Voltage:12V; Battery Technology:Lead Acid; External Height:158mm; External Width:131mm; External Depth:197mm; Weight:10.9kg; Battery Terminals:Bolt ;RoHS Compliant: NA |
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