参数资料
型号: NP40N055MLE-S18-AY
厂商: Renesas Electronics America
文件页数: 10/12页
文件大小: 0K
描述: MOSFET N-CH 55V 40A TO-220
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 41nC @ 5V
输入电容 (Ciss) @ Vds: 1950pF @ 25V
功率 - 最大: 1.8W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件
NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
5)TO-220 (MP-25K)
6)TO-262 (MP-25SK)
10.0 ± 0.2
φ 3.8 ± 0.2
4.45 ± 0.2
1.3 ± 0.2
10.0 ± 0.2
4.45 ± 0.2
1.3 ± 0.2
4
1 2
3
4
1 2 3
1.27 ± 0.2
0.8 ± 0.1
1.27 ± 0.2
0.8 ± 0.1
0.5 ± 0.2
2.5 ± 0.2
2.54 TYP.
2.54 TYP.
0.5 ± 0.2
2.5 ± 0.2
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Gate
Gate
Protection
Diode
Remark
8
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D14093EJ7V0DS
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