参数资料
型号: NP40N055MLE-S18-AY
厂商: Renesas Electronics America
文件页数: 4/12页
文件大小: 0K
描述: MOSFET N-CH 55V 40A TO-220
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 41nC @ 5V
输入电容 (Ciss) @ Vds: 1950pF @ 25V
功率 - 最大: 1.8W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件
NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
± 20
± 40
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 100
A
Total Power Dissipation (T A = 25 ° C)
Total Power Dissipation (T C = 25 ° C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
1.8
66
175
? 55 to + 175
W
W
° C
° C
Single Avalanche Current
Note2
I AS
29/21/8
A
Single Avalanche Energy
Note2
E AS
0.8/44/64
mJ
Notes 1. PW ≤ 10 μ s, Duty cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = 28 V, R G = 25 Ω , V GS = 20 → 0 V (see Figure 4. )
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.27
83.3
° C/W
° C/W
2
Data Sheet D14093EJ7V0DS
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