参数资料
型号: NP40N055MLE-S18-AY
厂商: Renesas Electronics America
文件页数: 6/12页
文件大小: 0K
描述: MOSFET N-CH 55V 40A TO-220
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 40A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 41nC @ 5V
输入电容 (Ciss) @ Vds: 1950pF @ 25V
功率 - 最大: 1.8W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220-3
包装: 管件
NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
TYPICAL CHARACTERISTICS (T A = 25 ° C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
70
60
50
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
60
30
40
20
20
10
0
0
25
50
75
100 125 150 175 200
0
0
25
50
75
100 125 150 175 200
T C - Case Temperature - ° C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
90
80
T C - Case Temperature - ° C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
(on
DS S
(V
ite
Lim 0 V)
Lim wer
ite Di
ipa
0 μ
I AS AS = 8 A A
100
10
R
G
)
=1
d
I D(DC)
Po DC
d ss
ti
I D(pulse)
1m
on
s
PW
=1
10
s
0 μ
s
70
60
50
40
64 mJ
44 mJ
I =8
21 A
30
29 A
1
20
Single pulse
T C = 25 ° C
0.1
0.1
1
10
100
10
0.8 mJ
0
25
50
75
100
125
150
175
V DS - Drain to Source Voltage - V
Starting T ch - Starting Channel Temperature - ° C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
R th(ch-A) = 83.3 ° C/W
10
R th(ch-C) = 2.27 ° C/W
1
0.1
Single pulse
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D14093EJ7V0DS
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