参数资料
型号: NP55N055SUG-E1-AY
厂商: Renesas Electronics America
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N-CH 55V 55A TO-252
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 55A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 28A,10V
闸电荷(Qg) @ Vgs: 90nC @ 10V
输入电容 (Ciss) @ Vds: 5250pF @ 25V
功率 - 最大: 1.2W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252(MP-3ZK)
包装: 带卷 (TR)
NP55N055SUG
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
I DSS
I GSS
V GS(off)
TEST CONDITIONS
V DS = 55 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
2.0
TYP.
3.0
MAX.
1.0
± 100
4.0
UNIT
μ A
nA
V
Forward Transfer Admittance
Note
| y fs |
V DS = 10 V, I D = 28 A
11
22
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Note
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V GS = 10 V, I D = 28 A
V DS = 25 V
V GS = 0 V
f = 1 MHz
V DD = 28 V, I D = 28 A
V GS = 10 V
R G = 0 ?
V DD = 44 V
V GS = 10 V
I D = 55 A
7.7
3500
260
160
24
18
60
8
60
15
21
10
5250
390
290
53
45
120
20
90
m ?
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 55 A, V GS = 0 V
I F = 55 A, V GS = 0 V
di/dt = 100 A/ μ s
0.95
38
45
1.5
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 ?
50 ?
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
2
PG.
50 ?
V DD
Data Sheet D16863EJ2V0DS
相关PDF资料
PDF描述
NP60N03KUG-E1-AY MOSFET N-CH 30V 60A TO-263
NP60N03SUG-E1-AY MOSFET N-CH 30V 60A TO-252
NP60N04KUG-E1-AY MOSFET N-CH 40V 60A TO-263
NP60N04MUG-S18-AY MOSFET N-CH 40V 60A TO-220
NP60N055KUG-E1-AY MOSFET N-CH 55V 60A TO-263
相关代理商/技术参数
参数描述
NP55N055SUG-E1-AY/K 制造商:Renesas Electronics Corporation 功能描述:
NP55N06CLD 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-220AB
NP55N06DLD 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-262AA
NP55N06ELD 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB
NP5-6 制造商:EnerSys 功能描述:LEAD ACID BATTERY, 6V, 5.6AH; Battery Size Code:-; Battery Capacity:5Ah; Battery Voltage:6V; Battery Technology:Lead Acid; External Height:107mm; External Width:47mm; External Depth:70mm; Weight:930g; Battery Terminals:Solder Tab ;RoHS Compliant: NA