参数资料
型号: NP60N055KUG-E1-AY
厂商: Renesas Electronics America
文件页数: 5/9页
文件大小: 0K
描述: MOSFET N-CH 55V 60A TO-263
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 92nC @ 10V
输入电容 (Ciss) @ Vds: 5600pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
NP60N055KUG
TYPICAL CHARACTERISTICS (T A = 25°C)
120
100
80
60
40
20
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
90
80
70
60
50
40
30
20
10
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
1000
T C - Case Temperature - ° C
FORWARD BIAS SAFE OPERATING AREA
T C - Case Temperature - ° C
R DS(on) Limited
I D(pulse) = 240 A
100
10
(at V GS = 10 V)
I D(DC) = 60 A
PW = 100 μ s
1 ms
DC
1
0.1
T C = 25°C
Single pulse
10 ms
0.1
1
10
100
V DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R th(ch-A) = 83.3°C/W
10
1
R th(ch-C) = 1.70°C/W
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16862EJ1V0DS
3
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