参数资料
型号: NP60N055KUG-E1-AY
厂商: Renesas Electronics America
文件页数: 8/9页
文件大小: 0K
描述: MOSFET N-CH 55V 60A TO-263
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 60A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.4 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 92nC @ 10V
输入电容 (Ciss) @ Vds: 5600pF @ 25V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
NP60N055KUG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZK)
10.0±0.3
4.45±0.2
No plating
7.88 MIN.
4
0.025 to
0.25
1.3±0.2
0.75±0.2
0.5±
0.2
2.54
0 to
8 o
0.25
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D16862EJ1V0DS
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