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| 型号： | NP82N055NUG-S18-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 82A TO-262 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 82A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 41A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9600pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055MUG, NP82N055NUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP82N055MUG-S18-AY
NP82N055NUG-S18-AY
Note
Note
Pure Sn (Tin)
Tube
50 p/tube
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
? Non logic level
? Super low on-state resistance
R DS(on) = 6.0 m Ω MAX. (V GS = 10 V, I D = 41 A)
? High current rating
I D(DC) = ± 82 A
? Low input capacitance
C iss = 6400 pF TYP.
? Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-220)
(TO-262)
Drain Current (pulse)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
Note1
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
V DSS
V GSS
I D(DC)
I D(pulse)
P T1
P T2
T ch
55
± 20
± 82
± 328
143
1.8
175
V
V
A
A
W
W
° C
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
T stg
I AR
E AR
? 55 to + 175
38
144
° C
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150 ° C, R G = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.05
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19804EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
相关PDF资料 |
PDF描述 |
|---|---|
| NP82N055PUG-E1-AY | MOSFET N-CH 55V 82A TO-263 |
| NP82N06MLG-S18-AY | MOSFET N-CH TO-220 |
| NP82N06NLG-S18-AY | MOSFET N-CH 60V 82A TO-262 |
| NP82N06PDG-E1-AY | MOSFET N-CH 60V 82A TO-263 |
| NP83P04PDG-E1-AY | MOSFET P-CH -40V 83A TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP82N055PUG-E1-AY | 功能描述:MOSFET N-CH 55V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NP82N055PUG-E1-AY/JM | 制造商:Renesas Electronics Corporation 功能描述: |
| NP82N055PUG-E2-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/82A |
| NP82N06MLG | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP82N06MLG-S18-AY | 功能描述:MOSFET N-CH TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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