- 您现在的位置：买卖IC网 > PDF目录18290 > NP84N075NUE-S18-AY (Renesas Electronics America)MOSFET N-CH 75V 84A TO-262 PDF资料下载
参数资料
| 型号： | NP84N075NUE-S18-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 84A TO-262 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 84A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12.5 毫欧 @ 42A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8400pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I DSS
I GSS
V GS(th)
| y fs |
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V F(S-D)
t rr
Q rr
TEST CONDITIONS
V DS = 75 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
V DS = 10 V, I D = 42 A
V GS = 10 V, I D = 42 A
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 38 V, I D = 42 A,
V GS = 10 V,
R G = 0 Ω
V DD = 60 V,
V GS = 10 V,
I D = 84 A
I F = 84 A, V GS = 0 V
I F = 84 A, V GS = 0 V,
di/dt = 100 A/ μ s
MIN.
2.0
21
TYP.
3.0
43
9.3
5600
530
270
30
21
72
12
100
24
35
1.0
70
200
MAX.
10
± 100
4.0
12.5
8400
800
490
66
53
150
30
150
UNIT
μ A
nA
V
S
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = 20 V → 0 V
R G = 25 Ω
50 Ω
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS
10%
0
V GS
90%
I D
I AS
BV DSS
V DS
V GS
0
I D
Wave Form
I D
0 10%
90%
I D
90%
10%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet D14675EJ4V0DS
3
相关PDF资料 |
PDF描述 |
|---|---|
| M2024TXW13-GH | SWITCH ROCKER SP3T 6A 125V |
| 445W31B20M00000 | CRYSTAL 20.000000 MHZ 13PF SMD |
| M2012SS2G13 | SWITCH TOGGLE SPDT VERT PC MNT |
| FXO-LC735R-1.163 | OSC 1.163 MHZ 3.3V LVDS SMD |
| 445W31B16M00000 | CRYSTAL 16.000000 MHZ 13PF SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP84W | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 4-G, 4) DUP, WH |
| NP865B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x500 Blk Pkg Black, 30.20x21.77x19.68, Steel |
| NP866B | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar 800x600x600 Blk Pkg Black, 30.20x21.77x23.62, Steel |
| NP86N04CHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04CHE-S12-AZ | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
发布紧急采购，3分钟左右您将得到回复。