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参数资料
| 型号： | NP88N04DHE-S12-AY |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 225K |
| 代理商： | NP88N04DHE-S12-AY |
Data Sheet D14236EJ8V0DS
3
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
30
60
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
3.4
4.3
m
Ω
Input Capacitance
Ciss
7300
11000
pF
Output Capacitance
Coss
1400
2100
pF
Reverse Transfer Capacitance
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
620
1120
pF
Turn-on Delay Time
td(on)
38
84
ns
Rise Time
tr
27
68
ns
Turn-off Delay Time
td(off)
110
220
ns
Fall Time
tf
VDD = 20 V, ID = 44 A,
VGS = 10 V,
RG = 1
Ω
32
80
ns
Total Gate Charge
QG
120
180
nC
Gate to Source Charge
QGS
30
nC
Gate to Drain Charge
QGD
VDD = 32 V,
VGS = 10 V,
ID = 88 A
43
nC
Body Diode Forward Voltage
VF(S-D)
IF = 88 A, VGS = 0 V
0.95
V
Reverse Recovery Time
trr
64
ns
Reverse Recovery Charge
Qrr
IF = 88 A, VGS = 0 V,
di/dt = 100 A/
μs
99
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
相关PDF资料 |
PDF描述 |
|---|---|
| NP88N04EHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP88N04EHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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