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参数资料
| 型号： | NP88N04DHE-S12-AY |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | MOS场效应晶体管的开关N沟道功率MOSFET |
| 文件页数： | 9/10页 |
| 文件大小： | 225K |
| 代理商： | NP88N04DHE-S12-AY |
Data Sheet D14236EJ8V0DS
8
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
5)TO-220 (MP-25K)
6)TO-262 (MP-25SK)
4
2.8
±
0.3
10.0
± 0.2
3.8
± 0.2
φ
6.3
±
0.3
4.45
± 0.2
1.3
± 0.2
0.8
± 0.1
0.5
± 0.2
2.5
± 0.2
1.27
± 0.2
3.1
±
0.2
15.9
MAX.
12 3
13.7
±
0.3
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4
12 3
10.0
± 0.2
4.45
± 0.2
1.3
± 0.2
13.7
±
0.3
0.8
± 0.1
1.27
± 0.2
0.5
± 0.2
2.5
± 0.2
2.54 TYP.
1.2
±
0.3
8.9
±
0.2
10.1
±
0.3
3.1
±
0.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| NP88N04EHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NP88N04EHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04EHE-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET |
| NP88N04KHE-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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