参数资料
型号: NRVB140SFT3G
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 107K
描述: DIODE SCHOTTKY 1A 40V SOD-123
标准包装: 10,000
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 40V
安装类型: 表面贴装
封装/外壳: SOD-123
供应商设备封装: SOD-123
包装: 带卷 (TR)
MBR140SF, NRVB140SF
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
40
V
Average Rectified Forward Current (At Rated VR, TL
= 112
°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL
= 95
°C)
IFRM
2.0
A
Non?Repetitive Peak Surge Current
(Non?Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
30
A
Storage Temperature
Tstg
?55 to 150
°C
Operating Junction Temperature
TJ
?55 to 125
°C
Voltage Rate of Change (Rated VR, TJ
= 25
°C)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 1)
Thermal Resistance, Junction?to?Lead (Note 2)
Thermal Resistance, Junction?to?Ambient (Note 1)
Thermal Resistance, Junction?to?Ambient (Note 2)
R
R
tjl
tjl
R
R
tja
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.2
).
2. Mounted with 1 in. copper pad (Cu area 700 mm
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
VF
TJ
= 25
°C
TJ
= 85
°C
V
(IF
= 0.1 A)
(IF
= 1.0 A)
(IF
= 3.0 A)
0.36
0.55
0.85
0.30
0.515
0.88
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
IR
TJ
= 25
°C
TJ
= 85
°C
mA
(VR
= 40 V)
(VR
= 20 V)
0.5
0.15
25
18
3. Pulse Test: Pulse Width ≤
250
s, Duty Cycle ≤
2%.
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