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参数资料
| 型号： | NRVB140SFT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 107K |
| 描述： | DIODE SCHOTTKY 1A 40V SOD-123 |
| 标准包装： | 10,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 40V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
       MBR140SF, NRVB140SF http://onsemi.com 3 I F , INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.3 0.5 0.90.7 TJ = 85 °C TJ = 125 °C TJ = ?40°C TJ = 25 °C 100 0.1 10 1.0 0.1 0.3 0.5 0.90.7 TJ = 85 °C TJ = 125 °C TJ = 25 °C I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 40 ?6 0 VR, REVERSE VOLTAGE (VOLTS) 100E?3 10E?3 1.0E?3 100E?6 10E?6 1.0E VR, REVERSE VOLTAGE (VOLTS) 10 20 30 40 ?6 0 1.0E+0 100E?6 10E 10 20 30 TJ = 125 °C TJ = 85 °C TJ = 25 °C TJ = 85 °C TJ = 25 °C 100E?3 10E?3 1.0E?3 P FO , AVERAGE POWER DISSIPATION (WATTS) = 10 Ipk/Io = 5 Figure 5. Current Derating IO, AVERAGE FORWARD CURRENT (AMPS) 0.2 0 0 1.0 0.6 0.5 0.3 0.1 0.4 0.8 1.2 1.60.6 1.41.0 0.4 = SQUARE WAVE dc Ipk/Io Ipk/Io Ipk/Io = 20 0.2 0.7 0.8 0.9 Figure 6. Forward Power Dissipation I O , AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5 TL, LEAD TEMPERATURE (°C) 25 35 1.8 1 0.8 0.4 0.2 0 45 65 85 12555 11575 95 105 0.6 SQUARE WAVE dc Ipk/Io = Ipk/Io = 10 Ipk/Io = 20 1.2 1.4 1.6 freq = 20 kHz |
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