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| 型号： | NRVB140SFT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/5页 |
| 文件大小： | 107K |
| 描述： | DIODE SCHOTTKY 1A 40V SOD-123 |
| 标准包装： | 10,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 40V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
    MBR140SF, NRVB140SF http://onsemi.com 4 Figure 7. Capacitance T J , DERATED OPERATING TEMPERATURE ( ° C) Figure 8. Typical Operating Temperature Derating* 510 2025 4030 35 0 VR, DC REVERSE VOLTAGE (VOLTS) 125 65 55 15 C, CAPACITANCE (pF) 510 202530 0 VR, REVERSE VOLTAGE (VOLTS) 1000 100 10 15 TJ = 25 °C 40 35 75 85 95 105 115 RJA = 25.6 °C/W 130°C/W 235°C/W 324.9°C/W * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: T J = T Jmax ? r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as T J = T Jmax ? r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. r(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response 1000 0.0001 0.001 0.01 1 10 1000.1 0.000001 0.00001 t1, TIME (sec) 1000 1 0.1 10 100 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 JA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils D = 0.5 SINGLE PULSE 0.2 0.1 0.05 0.01 |
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