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参数资料
| 型号： | NSD914F3T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 112K |
| 描述： | IC DIODE SW HS 100V SOT-1123 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 标准包装： | 8,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 10mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 75V |
| 电容@ Vr, F： | 4pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-1123 |
| 供应商设备封装： | SOT-1123 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2009
January, 2009 ?
Rev. 0
1
Publication Order Number:
NSD914F3/D
NSD914F3T5G
High-Speed Switching
Diode
The NSD914F3T5G device is a spin?off of our popular SOT?23
three?leaded device. It is designed for high speed switching
applications and is housed in the SOT?1123 surface mount package.
This device is ideal for low?power surface mount applications where
board space is at a premium.
Features
?
Reduces Board Space
?
This is a Halide?Free Device
?
This is a Pb?Free Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA
= 25
°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
(Note 1)
432
°C/W
Total Device Dissipation, TA
= 25
°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction?to?Lead 3
RJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2
1 oz, copper traces.
2
1 oz, copper traces.
2. 500 mm
SOT?1123
CASE 524AA
STYLE 2
11
2
NSD914F3T5G
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping?
NSD914F3T5G SOT?1123
(Pb?Free)
8000/Tape & Reel
R = Device Code
M = Date Code
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
R M
1
ANODE
3
CATHODE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSD914X | 制造商:LUGUANG 制造商全称:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:High Speed Switching Diode |
| NSD914XV2T1 | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSD914XV2T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NSD914XV2T1 Data Sheet |
| NSD914XV2T1G | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| NSDB7520-G63 | 制造商:Digi International Inc 功能描述:DIGI NET+WORKS NS7520 V6.3 (GN 制造商:Digi International Inc 功能描述:DEV DIGI NET+WORKS V6.3 |
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