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参数资料
| 型号： | NSVR0230M2T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 112K |
| 描述： | DIODE SCHOTTKY 200MA 30V SOD723 |
| 标准包装： | 8,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 500mV @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-723 |
| 供应商设备封装： | SOD-723 |
| 包装： | 带卷 (TR) |
              ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 3 1 Publication Order Number: NSR0230/D NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high?speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand?held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA ? Low Reverse Current ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? This is a Pb?Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 1.0 A ESD Rating: Class 3B per Human Body Model Class C per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 1) TA = 25 ?C Derate above 25?C PD 167 2.0 mW mW/?C Thermal Resistance, Junction?to?Ambient RJA 600 ?C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +125 ?C 1. FR?5 Minimum Pad. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 30 V SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION NSR0230M2T5G SOD?723 (Pb?Free) 8,000/Tape & Reel 2 mm Pitch 1 CATHODE 2 ANODE http://onsemi.com ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD?723 CASE 509AA PLASTIC 7C = Specific Device Code M = Month Code = Pb?Free Package MARKING DIAGRAM 7C M 12 (Note: Microdot may be in either location) NSVR0230M2T5G SOD?723 (Pb?Free) 8,000/Tape & Reel 2 mm Pitch |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSVR0240V2T1G | 功能描述:肖特基二极管与整流器 SCHTY BARRIER DIO RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVR0320MW2T1G | 功能描述:肖特基二极管与整流器 SMALL SIG SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVRB521S30T1G | 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVS-1059 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| NSVS-1089 | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
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