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参数资料
| 型号： | NT5DS32M8AW-7K |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Double Data Rate SDRAM |
| 中文描述： | 256MB双数据速率SDRAM |
| 文件页数： | 20/78页 |
| 文件大小： | 1534K |
| 代理商： | NT5DS32M8AW-7K |
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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
20
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are initiated with a
Read command.
The starting column and bank addresses are provided with the Read command and Auto Precharge is either enabled or dis-
abled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge at the completion of the
burst, provided t
RAS
has been satisfied. For the generic Read commands used in the following illustrations, Auto Precharge is
disabled.
During Read bursts, the valid data-out element from the starting column address is available following the CAS latency after the
Read command. Each subsequent data-out element is valid nominally at the next positive or negative clock edge (i.e. at the
next crossing of CK and CK). The following timing figure entitled “Read Burst: CAS Latencies (Burst Length=4)” illustrates the
general timing for each supported CAS latency setting. DQS is driven by the DDR SDRAM along with output data. The initial low
state on DQS is known as the read preamble; the low state coincident with the last data-out element is known as the read post-
amble. Upon completion of a burst, assuming no other commands have been initiated, the DQs and DQS goes High-Z. Data
from any Read burst may be concatenated with or truncated with data from a subsequent Read command. In either case, a con-
tinuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed
burst or the last desired data element of a longer burst which is being truncated. The new Read command should be issued x
cycles after the first Read command, where x equals the number of desired data element pairs (pairs are required by the 2n
prefetch architecture). This is shown in timing figure entitled “Consecutive Read Bursts: CAS Latencies (Burst Length =4 or 8)”.
A Read command can be initiated on any positive clock cycle following a previous Read command. Nonconsecutive Read data
is shown in timing figure entitled “Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)”. Full-speed Random Read
Accesses: CAS Latencies (Burst Length = 2, 4 or 8) within a page (or pages) can be performed as shown on page 25.
t
RCD
and t
RRD
Definition
ROW
ACT
NOP
COL
ROW
BA y
BA y
BA x
ACT
NOP
NOP
CK
CK
Command
A0-A12
BA0, BA1
Don’t Care
RD/WR
t
RCD
t
RRD
NOP
NOP
相关PDF资料 |
PDF描述 |
|---|---|
| NT5DS32M8AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-75B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-7K | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS32M8AW | 256Mb DDR333/300 SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT5DS32M8AW-8B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8CS | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-5T | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-6K | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CT | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
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