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| 型号： | NTB13N10 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 13A D2PAK |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 Product Discontinuation 03/Apr/2007 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 165 毫欧 @ 6.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 64.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
NTB13N10
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 V, I D = 250 m A)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V GS = 0 V, V DS = 100 V, T J = 25 ° C)
(V GS = 0 V, V DS = 100 V, T J = 125 ° C)
Gate?Body Leakage Current (V GS = $ 20 V, V DS = 0)
V (BR)DSS
I DSS
I GSS
100
?
?
?
?
?
147
?
?
?
?
?
5.0
50
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS
Gate Threshold Voltage
V DS = V GS, I D = 250 m A)
Temperature Coefficient (Negative)
V GS(th)
2.0
?
3.2
?7.6
4.0
?
V
mV/ ° C
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = 10 V, I D = 6.5 A)
(V GS = 10 V, I D = 6.5 A, T J = 125 ° C)
Drain?to?Source On?Voltage
(V GS = 10 V, I D = 13 A)
V DS(on)
?
?
?
0.130
0.250
1.82
0.165
0.400
2.34
V
Forward Transconductance (V DS = 15 V, I D = 6.5 A)
g FS
?
6.0
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
390
115
35
550
160
70
pF
SWITCHING CHARACTERISTICS (Notes 2 and 3)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
Total Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
(V DD = 80 V, I D = 13 A,
V GS = 10 V, R G = 9.1 W )
(V DS = 80 V, I D = 13 A,
V GS = 10 V)
t d(on)
t r
t d(off)
t f
Q tot
Q gs
Q gd
?
?
?
?
?
?
?
11
40
20
36
14
3.0
7.0
20
80
40
70
20
?
?
ns
nC
BODY?DRAIN DIODE RATINGS (Note 2)
Diode Forward On?Voltage
Reverse Recovery Time
(I S = 13 A, V GS = 0 V)
(I S = 13 A, V GS = 0 V, T J = 125 ° C)
(I S = 13 A, V GS = 0 V,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
?
?
?
?
0.98
0.88
85
60
1.3
?
?
?
V
ns
t b
?
28
?
Reverse Recovery Stored Charge
Q RR
?
0.3
?
m C
2. Indicates Pulse Test: P.W. = 300 m s max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
NTB13N10
NTB13N10G
NTB13N10T4
NTB13N10T4G
Device
Package
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
Shipping ?
50 Units / Rail
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB13N10G | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB13N10T4 | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB13N10T4G | 功能描述:MOSFET 100V 13A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB-1401 | 制造商:QUEST TECHNOLOGY 功能描述:IVORY 4C RJ-11 SINGLE SURFACE BOX |
| NTB-1402 | 制造商:Quest Tech. 功能描述:Conn RJ-11 F 4 POS ST Cable Mount 4 Terminal 1 Port |
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