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参数资料
| 型号： | NTB25P06T4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 27.5A D2PAK |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 27.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 82 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1680pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTB25P06T4GOSDKR |
NTB25P06, NVB25P06
Power MOSFET
? 60 V, ? 27.5 A, P ? Channel D 2 PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
? AEC Q101 Qualified ? NVB25P06
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
? Bridge Circuits
V (BR)DSS
? 60 V
http://onsemi.com
R DS(on) TYP
65 m W @ ? 10 V
P ? Channel
D
I D MAX
? 27.5 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
V DSS
V GS
V GSM
? 60
" 15
" 20
V
V
Vpk
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain Current
? Continuous @ T A = 25 ° C
? Single Pulse (t p v 10 m s)
I D
I DM
27.5
80
A
Apk
Drain
Total Power Dissipation @ T A = 25 ° C
Operating and Storage
Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 V, V GS = 10 V,
I L(pk) = 20 A, L = 3 mH, R G = 25 W )
P D
T J , T stg
E AS
120
? 55 to
+175
600
W
° C
mJ
1
2
3
D 2 PAK
CASE 418B
4
Gate
NTB
25P06G
AYWW
Drain
Source
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
1.25
46.8
63.2
° C/W
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T L
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in 2 ).
Device
NTB25P06T4G
NVB25P06T4G
Package
D 2 PAK
(Pb ? Free)
D 2 PAK
(Pb ? Free)
Shipping ?
800 / Tape & Reel
800 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTB25P06/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB27N06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB27N06L | 制造商:ON Semiconductor 功能描述:Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220 |
| NTB27N06LT4 | 功能描述:MOSFET N-CH 60V 27A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTB27N06T4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB30N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 60 Volts, N-Channel TO-220 |
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