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参数资料
| 型号： | NTB6413ANT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 42A D2PAK |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 42A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 42A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 51nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 136W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 标准包装 |
| 其它名称： | NTB6413ANT4GOSDKR |
NTB6413AN, NTP6413AN,
NVB6413AN
N-Channel Power MOSFET
100 V, 42 A, 28 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
V (BR)DSS
100 V
http://onsemi.com
R DS(ON) MAX
28 m W @ 10 V
N ? Channel
D
I D MAX
(Note 1)
42 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
100
Unit
V
Gate ? to ? Source Voltage ? Continuous
V GS
$ 20
V
G
Continuous Drain
Current R q JC
Steady
State
T C = 25 ° C
T C = 100 ° C
I D
42
28
A
S
Power Dissipation
R q JC
Pulsed Drain Current
Steady T C = 25 ° C
State
t p = 10 m s
P D
I DM
136
178
W
A
4
4
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
42
° C
A
TO ? 220AB
1
2
3
D 2 PAK
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 Vdc, V GS = 10 Vdc,
I L(pk) = 36.5 A, L = 0.3 mH, R G = 25 W )
E AS
200
mJ
1
2
3
CASE 221A
STYLE 5
CASE 418B
STYLE 2
Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Case (Drain) Steady State
T L
Symbol
R q JC
260
Max
1.1
° C
Unit
° C/W
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Junction ? to ? Ambient (Note 1) R q JA 35
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
6413ANG
AYWW
3
Source
1
Gate
NTB
6413ANG
AYWW
2
Drain
3
Source
2
Drain
6413AN = Specific Device Code
G = Pb ? Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 3
1
Publication Order Number:
NTB6413AN/D
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