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| 型号： | NTB75N06LT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 75A D2PAK |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 Discontinuation 30/Jun/2006 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 37.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 92nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4370pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | NTB75N06LT4OS |
NTP75N06L, NTB75N06L
Power MOSFET
75 Amps, 60 Volts, Logic
Level
N?Channel TO?220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb?Free Packages are Available
Typical Applications
http://onsemi.com
75 AMPERES, 60 VOLTS
R DS(on) = 11 m W
N?Channel
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
4
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Symbol
Value
Unit
4
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 10 M W )
V DSS
V DGR
60
60
Vdc
Vdc
1
2
3
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
V GS
V GS
I D
I D
I DM
P D
" 20
" 15
75
50
225
214
1.4
2.4
Vdc
Adc
Apk
W
W/ ° C
W
1
2
3
TO?220AB D 2 PAK
CASE 221A CASE 418B
STYLE 5 STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4
Drain
Drain
Operating and Storage Temperature Range
T J , T stg
?55 to
+175
° C
75N06LG
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 5.0 Vdc, L = 0.3 mH
E AS
844
mJ
NTP75N06L
AYWW
AYWW
I L(pk) = 75 A, V DS = 60 Vdc)
1
3
1
2
3
Thermal Resistance
° C/W
Gate
Source
Gate
Drain
Source
? Junction?to?Case
? Junction?to?Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
T L
0.7
62.5
260
° C
2
Drain
A
= Assembly Location
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
Y
WW
G
= Year
= Work Week
= Pb?Free Package
reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in 2 ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 1
1
Publication Order Number:
NTP75N06L/D
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|---|---|
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| NTB75N03-06T4 | MOSFET N-CH 30V 75A D2PAK |
| NTD20N06T4 | MOSFET N-CH 60V 20A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTB75N06LT4G | 功能描述:MOSFET NFET 60V .012R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06T4 | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB75N06T4G | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTB794 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-126VAR |
| NTB795 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-126VAR |
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