参数资料
型号: NTB75N06T4G
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET PWR N-CHAN 60V 75A D2PAK
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 37.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 4510pF @ 25V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 剪切带 (CT)
其它名称: NTB75N06T4GOSCT
NTP75N06, NTB75N06
160
160
V DS w 10 V
140
V GS = 10 V
V GS = 6.5 V
140
120
100
80
60
V GS = 7 V
V GS = 8 V
V GS = 9 V
V GS = 6 V
V GS = 5.5 V
120
100
80
60
40
V GS = 5 V
40
T J = 25 ° C
20
0
V GS = 4.5 V
20
0
T J = 100 ° C
T J = ?55 ° C
0
1
2
3
4
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
0.015
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 1. On?Region Characteristics
0.015
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.013
V GS = 10 V
T J = 100 ° C
0.013
V GS = 15 V
T J = 100 ° C
0.011
0.011
0.009
0.007
0.005
0.003
T J = 25 ° C
T J = ?55 ° C
0.009
0.007
0.005
0.003
T J = 25 ° C
T J = ?55 ° C
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
2
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance vs. Gate?to?Source
Voltage
10000
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
I D = 37.5 A
V GS = 10 V
1000
100
V GS = 0 V
T J = 150 ° C
T J = 125 ° C
T J = 100 ° C
0.8
0.6
10
?50
?25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 6. Drain?to?Source Leakage Current
vs. Voltage
相关PDF资料
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