参数资料
型号: NTB75N06T4G
厂商: ON Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET PWR N-CHAN 60V 75A D2PAK
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.5 毫欧 @ 37.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 130nC @ 10V
输入电容 (Ciss) @ Vds: 4510pF @ 25V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D2PAK
包装: 剪切带 (CT)
其它名称: NTB75N06T4GOSCT
NTP75N06, NTB75N06
10000
12
8000
V DS = 0 V
V GS = 0 V
T J = 25 ° C
10
Q T
6000
C iss
8
Q 1
V GS
4000
C rss
C iss
6
Q 2
4
C oss
2000
C rss
2
I D = 75 A
T J = 25 ° C
0
10
5
V GS 0 V DS
5
10
15
20
25
0
0
10
20
30
40
50
60
70
80
90
100
GATE?TO?SOURCE OR DRAIN?TO?SOURCE (V)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage vs. Total Charge
1000
80
70
V GS = 0 V
T J = 25 ° C
100
t f
60
10
t r
t d(off)
50
40
30
1
t d(on)
V DS = 30 V
I D = 75 A
V GS = 5 V
20
10
0
1
10
100
0.6
0.64 0.68 0.72 0.76 0.8
0.84 0.86 0.92 0.96
1
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
V GS = 20 V
SINGLE PULSE
10 m s
1000
I D = 75 A
T C = 25 ° C
800
100
600
100 m s
1 ms
400
10
10 ms
1
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
200
0
0.1
1
10
100
25
50
75
100
125
150
175
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
相关PDF资料
PDF描述
FXO-HC535-38.7 OSC 38.7 MHZ 3.3V HCMOS SMD
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