参数资料
型号: NTD14N03R
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 25V 2.5A DPAK
产品变化通告: Product Discontinuation 27/Jun/2007
Product Discontinuation 03/Apr/2007
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 95 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 1.8nC @ 5V
输入电容 (Ciss) @ Vds: 115pF @ 20V
功率 - 最大: 1.04W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 管件
其它名称: NTD14N03ROS
NTD14N03R, NVD14N03R
TYPICAL CHARACTERISTICS
14
12
10
10 V
8V
7V
6V
5V
4.5 V
14
12
10
V DS ≥ 10 V
8
4V
8
6
4
3.5 V
6
4
T J = 25 ° C
2
0
0
2
4
6
3V
V GS = 2.5 V
8
10
2
0
0
1
T J = 125 ° C
2
3
T J = ? 55 ° C
4
5
6
0.20
0.16
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS = 10 V
0.20
0.16
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
T J = 125 ° C
0.12
0.08
T J = 125 ° C
T J = 25 ° C
0.12
0.08
T J = 25 ° C
T J = ? 55 ° C
T J = ? 55 ° C
0.04
0.04
V GS = 4.5 V
0
0
2
4
6
8
10
12
14
0
0
2
4
6
8
10
12
14
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus Drain Current
and Temperature
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Temperature
1.8
1.6
I D = 5 A
V GS = 10 V
1000
V GS = 0 V
1.4
1.2
1
0.8
100
T J = 150 ° C
T J = 125 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
10
0
5
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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NTD14N03RG 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube