参数资料
型号: NTD14N03R
厂商: ON Semiconductor
文件页数: 6/7页
文件大小: 0K
描述: MOSFET N-CH 25V 2.5A DPAK
产品变化通告: Product Discontinuation 27/Jun/2007
Product Discontinuation 03/Apr/2007
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 95 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 1.8nC @ 5V
输入电容 (Ciss) @ Vds: 115pF @ 20V
功率 - 最大: 1.04W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 管件
其它名称: NTD14N03ROS
NTD14N03R, NVD14N03R
PACKAGE DIMENSIONS
L3
1
E
b3
4
2
3
A
D
B
DETAIL A
A
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
C
c2
Z
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
INCHES
MILLIMETERS
L4
b2
e
b
0.005 (0.13)
M
C
c
L2
GAUGE
PLANE
L
L1
DETAIL A
ROTATED 90 5 CW
A1
H
C
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
MIN MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
??? 0.040
0.155 ???
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
??? 1.01
3.93 ???
SOLDERING FOOTPRINT*
6.20 3.00
0.244 0.118
2.58
0.102
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
相关PDF资料
PDF描述
RGP10BEHE3/73 DIODE GPP 1A 100V 150NS DO-41
RCM10DRKI-S13 CONN EDGECARD 20POS .156 EXTEND
PV37X204C01B00 TRIMMER 200K OHM 0.25W TH
EEC22DRXI CONN EDGECARD 44POS DIP .100 SLD
PV37X105C01B00 TRIMMER 1M OHM 0.25W TH
相关代理商/技术参数
参数描述
NTD14N03R_07 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 14 Amps, 25 Volts N-Channel DPAK
NTD14N03R-001 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD14N03R-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 14 Amps, 25 Volts N−Channel DPAK
NTD14N03R-1G 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD14N03RG 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube