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参数资料
| 型号： | NTD14N03RT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 2.5A DPAK |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.8nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 115pF @ 20V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NTD14N03RT4OSDKR |
NTD14N03R, NVD14N03R
Power MOSFET
14 Amps, 25 Volts
N ? Channel DPAK
Features
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Loss
? Low C iss to Minimize Driver Loss
? Low Gate Charge
? Optimized for High Side Switching Requirements in
High ? Efficiency DC ? DC Converters
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
14 AMPERES, 25 VOLTS
R DS(on) = 70.4 m W (Typ)
N ? CHANNEL
D
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
G
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
25
Unit
Vdc
4
4
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ? Junction ? to ? Case
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C, Chip
? Continuous @ T A = 25 ° C, Limited by Package
? Single Pulse (tp ≤ 10 m s)
Thermal Resistance, Junction ? to ? Ambient
(Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
V GS
R q JC
P D
I D
I D
I D
R q JA
P D
I D
± 20
6.0
20.8
14
11.4
28
80
1.56
3.1
Vdc
° C/W
W
A
A
A
° C/W
W
A
1 2
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
1
2
3
CASE 369D
DPAK ? 3
(Straight Lead)
STYLE 2
Thermal Resistance, Junction ? to ? Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JA
P D
I D
120
1.04
2.5
° C/W
W
A
MARKING DIAGRAM
& PIN ASSIGNMENTS
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T J , T stg
T L
? 55 to
150
260
° C
° C
4 Drain
4 Drain
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
1
Gate
Y
WW
3
2
Drain
= Year
= Work Week
1
Gate
2
Drain
3
Source
14N03
G
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 7
1
Publication Order Number:
NTD14N03R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD14N03RT4G | 功能描述:MOSFET 25V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD15 | 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
| NTD15N06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 15 Amps, 60 Volts |
| NTD15N06-001 | 功能描述:MOSFET N-CH 60V 15A IPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD15N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252AA |
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