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| 型号： | NTD15N06-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 15A IPAK |
| 产品变化通告： | Product Discontinuation 31/Mar/2005 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 450pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD15N06-001OS |
NTD15N06
Power MOSFET
15 Amps, 60 Volts
N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb ? Free Packages are Available
Applications
? Power Supplies
http://onsemi.com
15 AMPERES
60 VOLTS
R DS(on) = 76 m W ( TYP)
N ? Channel
D
?
Converters
?
?
Power Motor Controls
Bridge Circuits
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
S
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
MARKING
DIAGRAMS
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
V DGR
V GS
V GS
60
" 20
" 30
Vdc
Vdc
1 2
3
4
DPAK
CASE 369C
STYLE 2
YWW
15
N06G
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T J = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
I D
I D
I DM
P D
15
10
45
48
0.32
2.1
1.5
Adc
Apk
W
W/ ° C
W
W
1
2
3
4
15
N06
DPAK ? 3
CASE 369D
STYLE 2
= Device Code
= Specific Device
YWW
15
N06G
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche Ener-
gy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, L = 1.0 mH,
I L(pk) = 11 A, V DS = 60 Vdc)
T J , T stg
E AS
? 55 to
+175
61
° C
mJ
Y = Year
W = Work Week
G Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
Thermal Resistance ° C/W
? Junction ? to ? Case R q JC 3.13
? Junction ? to ? Ambient (Note 1) R q JA 71.4
? Junction ? to ? Ambient (Note 2) R q JA 100
Maximum Lead Temperature for Soldering Pur- T L 260 ° C
poses, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
NTD15N06 DPAK 75 Units / Rail
NTD15N06G DPAK 75 Units / Rail
(Pb ? Free)
NTD15N06 ? 1 DPAK ? 3 75 Units / Rail
NTD15N06 ? 1G DPAK ? 3 75 Units / Rail
(Pb ? Free)
NTD15N06T4 DPAK 2500/Tape & Reel
NTD15N06T4G DPAK 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 3
1
Publication Order Number:
NTD15N06/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD15N06L-001 | MOSFET N-CH 60V 15A IPAK |
| NTD18N06L-001 | MOSFET N-CH 60V 18A IPAK |
| NTD18N06T4G | MOSFET N-CH 60V 18A DPAK |
| NTD20N03L27-001 | MOSFET N-CH 30V 20A IPAK |
| NTD20N06-001 | MOSFET N-CH 60V 20A IPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD15N06-1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252AA |
| NTD15N06AV1 | 制造商:ON Semiconductor 功能描述: |
| NTD15N06AVT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N06L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 15 Amps, 60 Volts, Logic Level |
| NTD15N06L-001 | 功能描述:MOSFET N-CH 60V 15A IPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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