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| 型号： | NTD20N06-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 20A IPAK |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 20A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1015pF @ 25V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD20N06-001OS |
NTD20N06, NTDV20N06
Power MOSFET
20 Amps, 60 Volts, N ? Channel DPAK
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
? Lower R DS(on)
? Lower V DS(on)
? Lower Capacitances
? Lower Total Gate Charge
? Lower and Tighter V SD
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
? AEC Q101 Qualified ? NTDV20N06
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
60 V
http://onsemi.com
R DS(on) TYP
37.5 m W
N ? Channel
D
I D MAX
20 A
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING
DIAGRAM
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
V DGR
V GS
V GS
I D
I D
I DM
60
" 20
" 30
20
10
60
Vdc
Vdc
Adc
Apk
1 2
3
4
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
P D
T J , T stg
60
0.40
1.88
1.36
? 55 to
175
W
W/ ° C
W
W
° C
20N06
Y
WW
G
= Device Code
= Year
= Work Week
= Pb ? Free Package
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc,
L = 1.0 mH, I L (pk) = 18.4 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JC
R q JA
R q JA
T L
170
2.5
80
110
260
mJ
° C/W
° C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 8
1
Publication Order Number:
NTD20N06/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTD20N06L-001 | MOSFET N-CH 60V 20A IPAK |
| NTD20P06L-001 | MOSFET P-CH 60V 15.5A IPAK |
| NTD23N03R-1G | MOSFET N-CH 25V 3.8A IPAK |
| NTD24N06-001 | MOSFET N-CH 60V 24A IPAK |
| NTD24N06LG | MOSFET N-CH 60V 24A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD20N06-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTD20N06-1G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20N06G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD20N06L | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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