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| 型号： | NTD20P06L-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 15.5A IPAK |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 7.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 25V |
| 功率 - 最大： | 65W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD20P06L-001OS |
NTD20P06L, NTDV20P06L
Power MOSFET
? 60 V, ? 15.5 A, Single P ? Channel, DPAK
Features
? Withstands High Energy in Avalanche and Commutation Modes
? Low Gate Charge for Fast Switching
? AEC Q101 Qualified ? NTDV20P06L
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Bridge Circuits
? Power Supplies, Power Motor Controls
? DC ? DC Conversion
V (BR)DSS
? 60 V
http://onsemi.com
R DS(on) TYP
130 m W @ ? 5.0 V
P ? Channel
D
I D MAX
(Note 1)
? 15.5 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 60
Unit
V
G
Gate ? to ? Source
Voltage
Continuous
Drain Current
(Note 1)
Continuous
Non ? Repetitive t p v 10 ms
Steady State T A = 25 ° C
V GS
V GSM
I D
$ 20
$ 30
? 15.5
V
A
4
S
MARKING DIAGRAMS
4
Drain
Power Dissipa-
tion (Note 1)
Steady State
T A = 25 ° C
P D
65
W
1 2
3
Pulsed Drain t p = 10 m s
Current
Operating Junction and Storage Temperature
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 25 V, V GS = 5 V, I PK = 15 A,
L = 2.7 mH, R G = 25 W )
I DM
T J ,
T STG
E AS
$ 50
? 55 to
175
304
A
° C
mJ
DPAK
CASE 369C
STYLE 2
4
1
Gate
2
Drain
4
Drain
3
Source
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
THERMAL RESISTANCE RATINGS
1
2
3
Parameter
Symbol
Max
Unit
IPAK/DPAK
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
R q JC
R q JA
R q JA
2.3
80
110
° C/W
CASE 369D
STYLE 2
20P06L
1 2 3
Gate Drain Source
Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 6
1
Publication Order Number:
NTD20P06L/D
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PDF描述 |
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| NTD25P03L1G | MOSFET P-CH 30V 25A IPAK3 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD20P06L-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06L-1G | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20P06LG | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20P06LG | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK |
| NTD20P06LT4 | 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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