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| 型号： | NTD20P06L-001 |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 15.5A IPAK |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 150 毫欧 @ 7.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1190pF @ 25V |
| 功率 - 最大： | 65W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD20P06L-001OS |
NTD20P06L, NTDV20P06L
PACKAGE DIMENSIONS
IPAK
CASE 369D ? 01
ISSUE C
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
? T ?
SEATING
PLANE
1
4
2
3
A
K
Z
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
F
G
J
D 3 PL
0.13 (0.005)
M
T
H
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTD20P06L/D
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相关代理商/技术参数 |
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|---|---|
| NTD20P06L-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06L-1G | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20P06LG | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD20P06LG | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK |
| NTD20P06LT4 | 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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