参数资料
型号: NTD23N03RT4G
厂商: ON Semiconductor
文件页数: 7/7页
文件大小: 0K
描述: MOSFET PWR N-CHAN 25V 23A DPAK
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 3.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 3.76nC @ 4.5V
输入电容 (Ciss) @ Vds: 225pF @ 20V
功率 - 最大: 1.14W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 剪切带 (CT)
其它名称: NTD23N03RT4GOSCT
NTD23N03R
PACKAGE DIMENSIONS
DPAK ? 3
CASE 369D ? 01
ISSUE B
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
S
? T ?
SEATING
PLANE
F
1
4
2
3
A
K
J
H
Z
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155 ???
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
G
D 3 PL
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTD23N03R/D
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