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| 型号： | NTD2955G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 12A DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 25V |
| 功率 - 最大： | 55W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTD2955G-ND NTD2955GOS |
NTD2955, NVD2955
Power MOSFET
? 60 V, ? 12 A, P ? Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low ? voltage, high ?
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
http://onsemi.com
critical and offer an additional safety margin against unexpected
voltage transients.
Features
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? Designed for Low ? Voltage, High ? Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
?
These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
? 60 V
R DS(on) TYP
155 m W @ ? 10 V, 6 A
P ? Channel
D
G
S
I D MAX
? 12 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
MARKING DIAGRAMS
Rating
Symbol
Value
Unit
4
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
Drain Current
Drain Current ? Continuous @ T a = 25 ° C
Drain Current ? Single Pulse (t p ≤ 10 ms)
Total Power Dissipation @ T a = 25 ° C
Operating and Storage Temperature
Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 12 Apk, L = 3.0 mH, R G = 25 W )
V DSS
V GS
V GSM
I D
I DM
P D
T J , T stg
E AS
? 60
± 20
± 25
? 12
? 18
55
? 55 to
175
216
Vdc
Vdc
Vpk
Adc
Apk
W
° C
mJ
1 2
3
DPAK
CASE 369C
STYLE 2
1
Gate
4
4
Drain
2
Drain
3 1
Source Gate
4
Drain
2
Drain
4
Drain
3
Source
3
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
2.73
71.4
100
° C/W
1
2
DPAK ? 3
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
T L
260
° C
CASE 369D
STYLE 2
1 2 3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in 2 ).
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 13
1
Publication Order Number:
NTD2955/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD2955P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??60 V, a??12 A, Pa??Channel DPAK |
| NTD2955PT4G | 功能描述:MOSFET PFET 60V 12A 0.155R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD2955T4 | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD2955T4G | 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD2955T4G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 12A D-PAK |
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