- 您现在的位置：买卖IC网 > PDF目录18536 > NTD3055L170-1G (ON Semiconductor)MOSFET N-CH 60V 9A IPAK PDF资料下载
参数资料
| 型号： | NTD3055L170-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 9A IPAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 170 毫欧 @ 4.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 275pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD3055L170, NVD3055L170
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
53.6
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 4.5 Adc)
Static Drain ? to ? Source On ? Voltage (Note 3)
(V GS = 5.0 Vdc, I D = 9.0 Adc)
(V GS = 5.0 Vdc, I D = 4.5 Adc, T J = 150 ° C)
Forward Transconductance (Note 3) (V DS = 8.0 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
?
1.7
4.2
153
1.8
1.3
7.3
2.0
?
170
2.1
?
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
195
70
29
275
100
42
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = 30 Vdc, I D = 9.0 Adc,
V GS = 5.0 Vdc,
R G = 9.1 W ) (Note 3)
(V DS = 48 Vdc, I D = 9.0 Adc,
V GS = 5.0 Vdc) (Note 3)
t d(on)
t r
t d(off)
t f
Q T
Q 1
Q 2
?
?
?
?
?
?
?
9.7
69
10
38
4.7
1.4
2.9
20
150
20
80
10
?
?
ns
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 9.0 Adc, V GS = 0 Vdc) (Note 3)
(I S = 9.0 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 9.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.98
0.85
29.8
17.6
12.2
0.031
1.25
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
NTD3055L170G
NTD3055L170 ? 1G
NTD3055L170T4G
NVD3055L170T4G*
Device
Package
DPAK
(Pb ? Free)
DPAK ? 3
(Pb ? Free)
DPAK
(Pb ? Free)
DPAK
(Pb ? Free)
Shipping ?
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC ? Q101 Qualified and PPAP
Capable
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| ABM3C-12.288MHZ-D4Y-T | CRYSTAL 12.288 MHZ 18PF SMD |
| NTD3055-150G | MOSFET N-CH 60V 9A DPAK |
| ASEMPC-12.000MHZ-T3 | OSC 12.000 MHZ CMOS MEMS SMD |
| ASEMPC-11.0592MHZ-T3 | OSC 11.0592 MHZ CMOS MEMS SMD |
| NTD3055L170 | MOSFET N-CH 60V 9A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD3055L170G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L170T4 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L170T4G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD3055L170T4H | 制造商:ON Semiconductor 功能描述: |
| NTD30N02 | 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 24Volts N-Channel DPAK |
发布紧急采购，3分钟左右您将得到回复。