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| 型号： | NTD30N02G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 30A DPAK |
| 产品变化通告： | Product Discontinuation 03/Apr/2007 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 20V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb ? Free Packages are Available
http://onsemi.com
30 AMPERES
24 VOLTS
R DS(on) = 11.2 m W (Typ.)
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
N ? Channel
D
S
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Drain Current
? Continuous @ T A = 25 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 24 Vdc, V GS = 10 Vdc,
L = 1.0 mH, I L (pk) = 10 A, R G = 25 W )
Symbol
V DSS
V GS
I D
I DM
P D
T J , T stg
E AS
Value
24
" 20
30
100
75
? 55 to
150
50
Unit
Vdc
Vdc
Adc
Apk
W
° C
mJ
4
1 2
3
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAM
4
Drain
2
1 Drain 3
Gate Source
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
R q JC
R q JA
R q JA
T L
1.65
67
120
260
° C/W
° C
D30N02 = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Device
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size,
(Cu Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 sq in).
Device
NTD30N02
NTD30N02G
NTD30N02T4
NTD30N02T4G
Package
DPAK
DPAK
(Pb ? Free)
DPAK
DPAK
(Pb ? Free)
Shipping ?
75 Units/Rail
75 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 3
1
Publication Order Number:
NTD30N02/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD30N02T4 | 功能描述:MOSFET N-CH 24V 30A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTD30N02T4G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD32 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTD32N06 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD32N06/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 32 Amps， 60 Volts |
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