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| 型号： | NTD4809NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.6A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1456pF @ 12V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NTD4809NT4GOSDKR |
NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC Q101 Qualified ? NVD4809N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
9.0 m W @ 10 V
14 m W @ 4.5 V
D
I D MAX
58 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
V GS
" 20
V
S
Power Dissipation
1 2 1
2 3
3
3
4
4
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Steady
State
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current t p =10 m s
Current Limited by Package
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
I D
P D
I D
P D
I DM
I DmaxPkg
13.1
10.1
2.63
9.6
7.4
1.4
58
45
52
130
45
A
W
A
W
A
W
A
A
4 4
4
1
2
CASE 369AA CASE 369AD CASE 369D
DPAK IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
43
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 13.5 A, R G = 25 W )
dV/dt
E AS
6.0
91.0
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4809N
G
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 13
1
Publication Order Number:
NTD4809N/D
相关PDF资料 |
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| NTD4810NT4G | MOSFET N-CHAN 10.8A 30V DPAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4809NT4H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTD4810N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK |
| NTD4810N-1G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4810N-35G | 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4810NH | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK |
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