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参数资料
| 型号： | NTD4810NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 10.8A 30V DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1350pF @ 12V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTD4810NT4GOSCT |
NTD4810N, NVD4810N
Power MOSFET
30 V, 54 A, Single N ? Channel, DPAK/IPAK
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? AEC ? Q101 Qualified and PPAP Capable ? NVD4810N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
10 m W @ 10 V
15.7 m W @ 4.5 V
D
I D MAX
54 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
V GS
" 20
V
S
Continuous Drain
Current (R q JA ) (Note 1)
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note 2)
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
I D
P D
I D
P D
I DM
12.4
9.6
2.62
9
7
1.4
54
42
50
120
A
W
A
W
A
W
A
4
1 2
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Current Limited by Package
T A = 25 ° C
I DmaxPkg
45
A
Operating Junction and Storage Temperature
T J , T stg
? 55 to
175
° C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 1.0 mH, I L(pk) = 14 A, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
dV/dt
E AS
T L
41
6.0
98
260
A
V/ns
mJ
° C
Y
WW
4810N
2
1 Drain 3
Gate Source
= Year
= Work Week
= Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 10
1
Publication Order Number:
NTD4810N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4813N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK |
| NTD4813N-1G | 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4813N-35G | 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4813NH | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK |
| NTD4813NH-1G | 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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