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| 型号： | NTD4856N-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 13.3A IPAK |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2241pF @ 12V |
| 功率 - 最大： | 1.33W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N ? Channel, DPAK/IPAK
Features
? Trench Technology
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
25 V
http://onsemi.com
R DS(ON) MAX
4.7 m W @ 10 V
6.8 m W @ 4.5 V
D
I D MAX
89 A
Applications
? VCORE Applications
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
G
S
N ? CHANNEL MOSFET
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
25
± 20
V
V
4
4
4
2 3
3
3
4
4
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
Steady
State
t p =10 m s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
ID
P D
I D
P D
I DM
16.8
13.0
2.14
13.3
10.3
1.33
89
69
60
179
A
W
A
W
A
W
A
1 2 1
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain Drain
Current Limited by Package
T A = 25 ° C
I DmaxPkg
45
A
1
2
3
Source Gate Drain Source
1
2
3
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T J ,
T STG
I S
dV/dt
? 55 to
+175
50
6
° C
A
V/ns
2
1 Drain 3
Gate
Gate Drain Source
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 19 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
180.5
260
mJ
° C
Y
WW
4856N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
April, 2012 ? Rev. 2
1
Publication Order Number:
NTD4856N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4856N-35G | 功能描述:MOSFET NFET 25V 89A 0.0047R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4856NT4G | 功能描述:MOSFET NFET 25V 89A 0.0047R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4857N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK |
| NTD4857N-1G | 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4857N-35G | 功能描述:MOSFET NFET 25V 78A 0.0057R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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