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| 型号： | NTD4904N-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 79A SGL IPAK |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3052pF @ 15V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4904N
Power MOSFET
30 V, 79 A, Single N ? Channel, DPAK/IPAK
Features
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb ? Free Devices
V (BR)DSS
http://onsemi.com
R DS(on) MAX
I D MAX
Applications
? CPU Power Delivery
? DC ? DC Converters
30 V
3.7 m W @ 10 V
5.5 m W @ 4.5 V
D
79 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
G
N ? Channel
Gate ? to ? Source Voltage
Continuous Drain
Current (R q JA )
(Note 1)
T A = 25 ° C
T A = 100 ° C
V GS
I D
" 20
17.8
12.6
V
A
S
4
4
1 2
3
1
2 3
3
4
4
Power Dissipation
(R q JA ) (Note 1)
Continuous Drain
Current (R q JA ) (Note
2) Steady
State
Power Dissipation
(R q JA ) (Note 2)
Continuous Drain
Current (R q JC )
(Note 1)
Power Dissipation
(R q JC ) (Note 1)
Pulsed Drain Current t p =10 m s
Current Limited by Package
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T C = 25 ° C
T C = 100 ° C
T C = 25 ° C
T A = 25 ° C
T A = 25 ° C
P D
I D
P D
I D
P D
I DM
I DmaxPkg
2.6
13
9.2
1.4
79
56
52
316
90
W
A
W
A
W
A
A
4
1
2
CASE 369AA CASE 369AD CASE 369D
DPAK IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
Drain Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
? 55 to
175
47
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
L = 0.1 mH, I L(pk) = 37 A, R G = 25 W )
dV/dt
E AS
6.0
68.4
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
4904N
G
= Year
= Work Week
= Device Code
= Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 ? Rev. 1
1
Publication Order Number:
NTD4904N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4904N-35G | 功能描述:MOSFET NFET IPAK 30V 79A 3.7 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4904NT4G | 功能描述:MOSFET NFET IPAK 30V 79A 3.7 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4905N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK |
| NTD4905N-1G | 功能描述:MOSFET NFET DPAK 30V 67A 4.5 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4905N-35G | 功能描述:MOSFET NFET DPAK 30V 67A 4.5 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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