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| 型号： | NTD50N03R-35G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 7.8A IPAK |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 30A，11.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 12V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短截引线，IPak |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD50N03R
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction?to?Case (Drain)
Junction?to?Ambient ? Steady State (Note 3)
Junction?to?Ambient ? Steady State (Note 4)
Symbol
R q JC
R q JA
R q JA
Value
3.0
71.4
100
Unit
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
25
?16
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1.5
m A
V DS = 20 V
T J = 125 ° C
10
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.7
2.0
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
?5.0
mV/ ° C
Drain?to?Source On Resistance
R DS(on)
V GS = 11.5 V
V GS = 10 V
V GS = 4.5 V
I D = 30 A
I D = 15 A
I D = 30 A
I D = 30 A
I D = 15 A
12
11.7
12.5
21
19
14
23
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
15
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 12 V
V GS = 4.5 V, V DS = 15 V,
I D = 30 A
V GS = 11.5 V, V DS = 15 V,
I D = 30 A
610
300
125
6.0
0.9
1.9
3.7
15
1.0
1.9
3.9
750
10
pF
nC
nC
3. Surface?mounted on FR4 board using 1 sq in pad, 1 oz Cu.
4. Surface?mounted on FR4 board using the minimum recommended pad size.
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
http://onsemi.com
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