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| 型号： | NTD60N02R |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 8.5A DPAK |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1330pF @ 20V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
NTD60N02R
Power MOSFET
62 A, 25 V, N?Channel, DPAK
Features
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C iss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
8.4 m W @ 10 V
I D MAX
62 A
High?Efficiency DC?DC Converters
?
Pb?Free Packages are Available
N?Channel
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
V DSS
V GS
25
± 20
Vdc
Vdc
G
Thermal Resistance
Junction?to?Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
Continuous @ T C = 25 ° C, Chip
Continuous @ T C = 25 ° C, Limited by Package
Continuous @ T A = 25 ° C, Limited by Wires
Thermal Resistance
Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
R q JC
P D
I D
I D
I D
R q JA
P D
I D
2.6
58
62
50
32
80
1.87
10.5
° C/W
W
A
A
A
C/W
W
A
4
1 2
3
CASE 369AA
DPAK
S
4
1
2 3
CASE 369AC
3 IPAK
4
1
2
3
CASE 369D
DPAK
Thermal Resistance
Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
Operating and Storage Temperature
R q JA
P D
I D
T J , and
T stg
120
1.25
8.5
?55 to
175
° C/W
W
A
° C
(Surface Mount) (Straight Lead) (Straight Lead)
STYLE 2 STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
Single Pulse Drain?to?Source Avalanche Energy
? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10.0 Vdc,
I L = 11 Apk, L = 1.0 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
T L
60
260
mJ
° C
4
Drain
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
1
Gate
2
Drain
3
Source
1 2 3
Gate Drain Source
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
Y
WW
T60N02R
G
= Year
= Work Week
= Device Code
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
December, 2006 ? Rev. 12
1
Publication Order Number:
NTD60N02R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD60N02R-001 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD60N02R-032 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-035 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD60N02R-1G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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