参数资料
型号: NTD60N02R
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: MOSFET N-CH 25V 8.5A DPAK
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 8.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 10.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 14nC @ 4.5V
输入电容 (Ciss) @ Vds: 1330pF @ 20V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 管件
NTD60N02R
TYPICAL CHARACTERISTICS
140
120
100
V GS = 10 V
8.0 V
6.0 V
4.2 V
T J = 25 ° C
5.0 V
4.5 V
120
100
80
V DS w 10 V
80
4.0 V
3.8 V
60
60
3.6 V
40
3.4 V
3.2 V
40
T J = 175 ° C
20
3.0 V
2.8 V
2.6 V
20
T J = 25 ° C
0
0
2
4
6
8
2.4 V
10
0
0
2
T J = ?55 ° C
4
6
8
0.05
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 1. On?Region Characteristics
0.05
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.04
0.03
0.02
0.01
I D = 62 A
T J = 25 ° C
0.04
0.03
0.02
0.01
T J = 25 ° C
V GS = 4.5 V
V GS = 10 V
0
2
4
6
8
10
0
20
40
60
80
100
120
140
2.0
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 3. On?Resistance versus
Gate?to?Source Voltage
100000
I D , DRAIN CURRENT (A)
Figure 4. On?Resistance versus Drain Current
and Gate Voltage
1.8
1.6
I D = 31 A
V GS = 10 V
10000
V GS = 0 V
T J = 175 ° C
1.4
1000
1.2
1.0
0.8
0.6
100
10
T J = 100 ° C
?50
?25
0
25
50
75
100
125
150
175
0
6 12 18
24
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
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参数描述
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NTD60N02R-1G 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube