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| 型号： | NTD6416ANL-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 19A DPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 74 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 25V |
| 功率 - 最大： | 71W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 长引线，IPak，TO-251AB |
| 供应商设备封装： | D-Pak |
| 包装： | 管件 |
| 其它名称： | NTD6416ANL-1G-ND NTD6416ANL-1GOS |
NTD6416ANL, NVD6416ANL
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
100
120
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 100 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.4
2.2
V
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 4.5 V, I D = 10 A
70
80
m W
V GS = 10 V, I D = 10 A
V GS = 10 V, I D = 19 A
62
68
74
74
Forward Transconductance
g FS
V DS = 5 V, I D = 10 A
18
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Plateau Voltage
Gate Resistance
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GP
R G
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
V GS = 10 V, V DS = 80 V, I D = 19 A
700
110
50
25
0.7
2.4
9.6
3.2
2.4
1000
40
pF
nC
V
W
SWITCHING CHARACTERISTICS (No te 3)
Turn ? On Delay Time
t d(on)
7.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 80 V,
I D = 19 A, R G = 6.1 W
16
35
40
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 19 A
T J = 25 ° C
T J = 125 ° C
0.9
0.72
1.2
V
Reverse Recovery Time
t RR
50
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 19 A
38
14
Reverse Recovery Charge
Q RR
112
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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