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| 型号： | NTD65N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 9.5A DPAK |
| 产品变化通告： | LTB Notification |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.4 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 20V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD65N03R
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction?to?Case (Drain)
Junction?to?Ambient ? Steady State (Note 3)
Junction?to?Ambient ? Steady State (Note 4)
Symbol
R q JC
R q JA
R q JA
Value
2.5
80
115
Unit
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
25
29.5
19.2
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1.5
m A
V DS = 20 V
T J = 125 ° C
10
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.0
1.74
2.0
V
Negative Threshold Temperature Coefficient
V GS(TH) /T J
4.8
mV/ ° C
Drain?to?Source On Resistance
R DS(on)
V GS = 10 V, I D = 30 A
6.5
8.4
m W
V GS = 4.5 V, I D = 30 A
9.7
14.6
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
27
mHos
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
V GS = 0 V, f = 1.0 MHz,
V DS = 20 V
V GS = 5.0 V, V DS = 10 V,
I D = 30 A
1177
555
218
12.2
1.5
2.95
1400
16
pF
nC
Gate?to?Drain Charge
SWITCHING CHARACTERISTICS (Note 6)
Q GD
6.08
Turn?On Delay Time
t d(on)
6.3
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 25 V,
I D = 30 A, R G = 3.0 W
18.6
20.3
8.8
DRAIN?SOURCE DIODE CHARACTERISTIC S
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.85
1.1
V
I S = 20 A
T J = 125 ° C
0.72
Reverse Recovery Time
t RR
28.8
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 20 A
12.8
16
Reverse Recovery Time
Q RR
20
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
2.49
Drain Inductance
Gate Inductance
Gate Resistance
L D
L G
R G
T A = 25 ° C
0.02
3.46
1.75
nH
W
3.
4.
5.
6.
Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface?mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).
Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
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