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| 型号： | NTD95N02RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 12A DPAK |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 20V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD95N02R
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Case (Drain)
Junction?to?Ambient – Steady State (Note 3)
Junction?to?Ambient – Steady State (Note 4)
Symbol
R q JC
R q JA
R q JA
Value
1.45
52
100
Unit
° C/W
3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
4. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T
V GS = 0 V, I D = 250 m A
24
29
15
V
mV/ ° C
Temperature Coefficient
J
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 20 V
T J = 25 ° C
T J = 125 ° C
1.5
10
m A
Gate?to?Source Leakage
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.0
2.0
V
mV/ ° C
Coefficient
Drain?to?Source On?Resistance
R DS(on)
V GS = 4.5 V, I D = 10 A
5.9
8.0
m W
V GS = 10 V, I D = 20 A
4.5
5.0
Forward Transconductance
gFS
V GS = 10 V, I D = 10 A
30
S
CHARGES, CAPACITANCES AND GATE R ESISTANCE
Input Capacitance
C ISS
2400
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 20 V
1020
390
Total Gate Charge
Q T
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V; I D = 10 A
21
4.4
9.1
nC
SWITCHING CHARACTERISTICS
Turn?on Delay Time
t d(on)
10
ns
Rise Time
Turn?off Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 10 V,
I D = 30 A, R G = 3 W
82
26
70
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 20 A
T J = 25 ° C
0.83
1.2
V
Reverse Recovery Time
t RR
45
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, d ISD /dt = 100 A/ m s,
I S = 20 A
20
30
Reverse Recovery Charge
Q RR
50
nC
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
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