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| 型号： | NTF3055-100T3LF |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 3A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 455pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055-100T3LFOS |
NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N ? Channel SOT ? 223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? AEC ? Q101 Qualified and PPAP Capable ? NVF3055 ? 100
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
3.0 A, 60 V
R DS(on) = 110 m W
N ? Channel
D
Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
4
S
MARKING
DIAGRAM
& PIN
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
Symbol
V DSS
V DGR
V GS
Value
60
60
± 20
± 30
Unit
Vdc
Vdc
Vdc
Vpk
1
2
3
SOT ? 223
CASE 318E
STYLE 3
ASSIGNMENT
Drain
4
AWW
3055 G
G
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Derate above 25 ° C
Operating and Storage Temperature Range
I D
I D
I DM
P D
T J , T stg
3.0
1.4
9.0
2.1
1.3
0.014
? 55
to 175
Adc
Apk
W
W
W/ ° C
° C
1 2 3
Gate Drain Source
A = Assembly Location
WW = Work Week
3055 = Specific Device Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc,
I L (pk) = 7.0 Apk, L = 3.0 mH, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Ambient (Note 1)
? Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JA
R q JA
T L
74
72.3
114
260
mJ
° C/W
° C
Device
NTF3055 ? 100T1G
NTF3055 ? 100T3G
NVF3055 ? 100T1G
Package
SOT ? 223
(Pb ? Free)
SOT ? 223
(Pb ? Free)
SOT ? 223
(Pb ? Free)
Shipping ?
1000 / Tape &
Reel
4000 / Tape &
Reel
1000 / Tape &
Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 ? 2.4 oz. (Cu. Area 0.272 sq in).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTF3055 ? 100/D
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PDF描述 |
|---|---|
| NTF3055-160T1 | MOSFET N-CH 60V 2A SOT223 |
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| NTF5P03T3G | MOSFET P-CH 30V 3.7A SOT223 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF3055-160 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055-160T1 | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055-160T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTF3055-160T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055L108 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
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