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| 型号： | NTF6P02T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CHAN 10A 20V SOT223 |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 16V |
| 功率 - 最大： | 8.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTF6P02T3GOSCT |
NTF6P02, NVF6P02
Power MOSFET
-10 Amps, -20 Volts
P ? Channel SOT ? 223
Features
? Low R DS(on)
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
http://onsemi.com
? 10 AMPERES
? 20 VOLTS
R DS(on) = 44 m W (Typ.)
S
?
Qualified and PPAP Capable*
These Devices are Pb ? Free and are RoHS Compliant
G
Typical Applications
? Power Management in Portables and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
D
P ? Channel MOSFET
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Drain Current (Note 1)
? Continuous @ T A = 25 ° C
? Continuous @ T A = 70 ° C
? Single Pulse (t p = 10 m s)
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature Range
V DSS
V GS
I D
I D
I DM
P D
T J , T stg
? 20
± 8.0
? 10
? 8.4
? 35
8.3
? 55 to
+150
Vdc
Vdc
Adc
Apk
W
° C
4
1
2
SOT ? 223
CASE 318E
STYLE 3
1
Gate
Drain
4
AYW
6P02 G
G
2 3
Drain Source
Single Pulse Drain ? to ? Source Avalanche E AS 150 mJ
Energy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 5.0 Vdc,
I L(pk) = ? 10 A, L = 3.0 mH, R G = 25 W )
Thermal Resistance ° C/W
? Junction to Lead (Note 1) R q JL 15
? Junction to Ambient (Note 2) R q JA 71.4
? Junction to Ambient (Note 3) R q JA 160
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
A = Assembly Location
Y = Year
W = Work Week
6P02 = Specific Device Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
NTF6P02T3G SOT ? 223 4000 / Tape &
(Pb ? Free) Reel
NVF6P02T3G* SOT ? 223 4000 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
NTF6P02T3/D
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