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参数资料
| 型号： | NTGD3148NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 3.5A 6TSOP |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD3148NT1GOSDKR |
NTGD3148N
Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
? Low Threshold Levels, VGS(th) < 1.5 V
? Low Gate Charge (3.8 nC)
? Leading Edge Trench Technology of Low R DS(on)
? High Power and Current Handling Capability
? This is a Pb-Free Device
Applications
? DC-DC Converters (Buck and Boost Circuits)
? Low Side Load Switch
? Optimized for Battery and Load Management Applications in
Portable Equipment Like Cell Phones, DSCs, Media Player, Etc
?
Battery Charging and Protection Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
20 V
http://onsemi.com
N-CHANNEL MOSFET
R DS(on) Max
70 m W @ 4.5 V
100 m W @ 2.5 V
D
G
I D Max
3.5 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
20
± 12
Unit
V
V
S
N-CHANNEL MOSFET
Continuous Drain
Current (Note 1)
Continuous Drain
Steady State
t ≤ 5 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
I D
3.0
2.2
3.5
A
A
MARKING
DIAGRAM
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t ≤ 5 s
T A = 25 ° C
P D
0.9
1.1
W
1
TSOP-6
CASE 318G
DN M G
G
Pulsed Drain Current
t p = 10 m s
I DM
10
A
STYLE 13
1
Operating Junction and Storage Temperature
T J , T STG
-50 to
150
° C
DN = Specific Device Code
M = Date Code
Source Current (Body Diode)
I S
0.8
A
G
= Pb-Free Package
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE RATINGS
T L
260
° C
(Note: Microdot may be in either location)
PIN CONNECTION
Parameter
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
Symbol
R q JA
R q JA
Value
140
110
Unit
° C/W
° C/W
D 2
S 1
4
5
3 G 2
2 S 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
D 1
6
1 G 1
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1
Publication Order Number:
NTGD3148N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD3149C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual |
| NTGD3149CT1G | 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD4161P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161PT1G | 功能描述:MOSFET PFET TSOP6 20V 2.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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