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| 型号： | NTGD4167CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V DUAL 6-TSOP |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 295pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD4167CT1GOSDKR |
NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/ ? 2.2 A,
TSOP ? 6 Dual
Features
? Complementary N ? Channel and P ? Channel MOSFET
? Small Size (3 x 3 mm) Dual TSOP ? 6 Package
? Leading Edge Trench Technology for Low On Resistance
? Reduced Gate Charge to Improve Switching Response
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb ? Free Device
Applications
? DC ? DC Conversion Circuits
? Load/Power Switching with Level Shift
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
N ? Ch
30 V
P ? Ch
? 30 V
http://onsemi.com
R DS(on) MAX I D MAX (Note 1)
90 m W @ 4.5 V 2.6 A
125 m W @ 2.5 V 2.2 A
170 m W @ ? 4.5 V ? 1.9 A
300 m W @ ? 2.5 V ? 1.0 A
D1 D2
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
(N ? Ch & P ? Ch)
V DSS
V GS
30
± 12
V
V
G1
G2
N ? Channel
Continuous Drain
Current (Note 1)
P ? Channel
Continuous Drain
Current (Note 1)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
I D
2.6
1.9
2.9
? 1.9
? 1.4
? 2.2
A
A
S1
N ? CHANNEL MOSFET
1
S2
P ? CHANNEL MOSFET
MARKING
DIAGRAM
Power Dissipation
(Note 1)
Pulsed Drain
Current
Steady State
t ≤ 5s
N ? Ch
P ? Ch
T A = 25 ° C
t p = 10 m s
P D
I DM
0.9
1.1
8.6
? 6.3
W
A
TSOP ? 6
CASE 318G
STYLE 13
TA = Specific Device Code
1
TA M G
G
Operating Junction and Storage Temperature
T J , T STG
? 55 to
150
° C
M
G
= Date Code
= Pb ? Free Package
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
± 0.9
260
A
° C
(Note: Microdot may be in either location)
PIN CONNECTION
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – t ≤ 5 s (Note 1)
Symbol
R q JA
R q JA
Value
140
110
Unit
° C/W
° C/W
G1
S2
1
2
6
5
D1
S1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G2
3
(Top View)
4
D2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
December, 2008 ? Rev. 1
1
Publication Order Number:
NTGD4167C/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD4169F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 |
| NTGD4169FT1G | 功能描述:MOSFET FETKY 30V 2.6A 90MO TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGF3123F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGS1135P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −5.8 A, Single P−Channel, TSOP−6 |
| NTGS1135PT1G | 功能描述:MOSFET 8V Power Mosfet P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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